-
2018 Jiangsu Province Key R&D Plan
Project name: Research and development of key technologies for the preparation and application of sapphire-based high-reliability GaN-HEMT devices
Project time: 2018
Solved problems, benefits and significance:
Developed high-reliability sapphire-based enhanced GaN-HEMT devices that meet the needs of applications such as smart home appliances and new energy vehicles.
Project Status:Underway -
2018 Jiangsu Province Key R&D Plan
Project name: Development and application of key technologies for large-size, high-quality gallium oxide ultra-wide bandgap power semiconductor materials
Project time: 2018
Solved problems, benefits and significance:
Key breakthroughs have been made in material epitaxy technology and large-scale manufacturing processes, and high-quality, large-size, low-cost Ga2O3 epitaxial wafers that meet the requirements of power electronic devices have been obtained, which is a development and development in the field of advanced power semiconductors and power electronic devices in China. Practicality provides technical support.
Project Status:Underway -
2017 National Key R&D Program Strategic Advanced Electronic Materials Key Special Project
Project name: Key Technology of New GaN-based Power Electronic Devices Topic Avalanche breakdown effect and new withstand voltage structure of GaN-based power devices
Project time: 2017
Solved problems, benefits and significance:
The withstand voltage level of GaN-based devices has achieved a breakthrough, reaching the international advanced level, clarifying the stability of GaN-based devices, and finding ways to improve device stability; trying to apply GaN-based devices in power supplies to lay the foundation for popularization.
Project Status:Finished -
2016 Jiangsu Province Key R&D Plan
Project name: Research and development of common key technologies for high-performance enhanced Si-based GaN power switching devices
Project time: 2016
Solved problems, benefits and significance:
Combining with the country’s development needs in energy conservation, emission reduction, and efficient use of energy, with the goal of achieving high-performance enhanced Si-based GaN power switching devices, the research and development of related common key technologies will be carried out to achieve related technological breakthroughs and Industrial development.
Project Status:Finished -
2015 National Development and Reform Commission Special Project
Project name: Industrialization of high-power GaN electronic devices and materials
Project time: 2015
Solved problems, benefits and significance:
In response to the foreign monopoly on my country's GaN semiconductor materials, it creates profits and taxes and increases employment.
Project Status:Finished -
2013 Provincial International Science and Technology Cooperation Project
Project name: Application Research of New MO Source to Improve the Performance of GaN High Power Devices
Project time: 2013
Project Status:Finished
