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Epitaxial Products

Specification Models Pictures
D-HEMT/650V/Si-150mm-1000μm 150 mm D-HEMT on Si
E-HEMT/650V/Si-150mm-1000μm 150 mm E-HEMT on Si
D-HEMT/200V/Si-150mm-1000μm 150 mm D-HEMT on Si
E-HEMT/200V/Si-150mm-1000μm 150 mm E-HEMT on Si
RF-HEMT/200V/Si-150mm-1000μm 150 mm rf-HEMT on Si
D-HEMT/650V/Si-200mm-975μm 200 mm D-HEMT on Si
E-HEMT/650V/Si-200mm-975μm 200 mm E-HEMT on Si
D-HEMT/200V/Si-200mm-725μm 200 mm D-HEMT on Si
E-HEMT/200V/Si-200mm-725μm 200 mm E-HEMT on Si
RF-HEMT/200V/SiC-50mm-360μm 50 mm rf-HEMT on SiC
RF-HEMT/200V/SiC-100mm-500μm 100 mm rf-HEMT on SiC
RF-HEMT/200V/SiC-150mm-500μm 150 mm rf-HEMT on SiC
D-HEMT/Sapphire-50mm-430μm D-HEMT on sapphire
D-HEMT/Sapphire-100mm-650μm D-HEMT on sapphire
D-HEMT/Sapphire-150mm-1000μm D-HEMT on sapphire
E-HEMT/Sapphire-50mm-430μm E-HEMT on sapphire
E-HEMT/Sapphire-100mm-650μm E-HEMT on sapphire
E-HEMT/Sapphire-150mm-1000μm E-HEMT on sapphire
SBD/650V/sapphire-50mm-430μm SBD on sapphire
SBD/650V/sapphire-100mm-650μm SBD on sapphire
SBD/650V/sapphire-150mm-1200μm SBD on sapphire

Power Component

Product Withstand voltage Conduction resistance Threshold voltage Model Package form Pictures
CE65E300DNYI 650V 300mΩ 2.5V 增強(qiáng)型 單管 DFN 5*6
CE65E160DNHI 650V 160mΩ 2.5V 增強(qiáng)型 單管 DFN 8*8
CE65E160DNYI 650V 160mΩ 2.5V 增強(qiáng)型 單管 DFN 5*6
CE65H110TOAI 650V 110mΩ 3.9V 耗盡型 級(jí)聯(lián) TO220
CE65H110DNDI 650V 110mΩ 3.9V 耗盡型 級(jí)聯(lián) DFN8*8
CE65H160TOAIF 650V 160mΩ 3.9V 耗盡型 級(jí)聯(lián) TO220F
CE65H160DNGI 650V 160mΩ 1.7V 耗盡型 級(jí)聯(lián) DFN 8*8
CE65H270TOBI 650V 270mΩ 3.9V 耗盡型 級(jí)聯(lián) TO252
CE65H270TOEI 650V 270mΩ 3.9V 耗盡型 級(jí)聯(lián) TO252
CE65H270DNGI 650V 270mΩ 1.7V 耗盡型 級(jí)聯(lián) DFN 8*8
CE65H270TOAIF 650V 270mΩ 3.9V 耗盡型 級(jí)聯(lián) TO220F
CE65H600TOEI 650V 600mΩ 3.9V 耗盡型 級(jí)聯(lián) TO252
CE65H600TOAIF 650V 600mΩ 3.9V 耗盡型 級(jí)聯(lián) TO220F
CE65H900TOEI 650V 900mΩ 3.9V 耗盡型 級(jí)聯(lián) TO252
CE65H160DNCI 650V 160mΩ 3.9V 耗盡型 級(jí)聯(lián) DFN5*6
CE65H270DNCI 650V 270mΩ 3.9V 耗盡型 級(jí)聯(lián) DFN5*6
CE65H600DNCI 650V 600mΩ 3.9V 耗盡型 級(jí)聯(lián) DFN5*6
CE65H900DNCI 650V 900mΩ 3.9V 耗盡型 級(jí)聯(lián) DFN5*6
CE65H080TOCI 650V 80mΩ 3.9V 耗盡型 級(jí)聯(lián) TO247-3

Foundry Process Platform

Product Category

Processing Procedure

01 photoetching（50mm-200mm）

02 Metal sputtering（Ti、Al、TiN、Cu）
Metal evaporation（Ti、Al、Ni、Pt、Mo、Ta、Ag、Co、Cr,etc.）

03 Dry etching（GaN、Si、SiC、SiO2、Si3N4、AL、TiN、Ni、Cr、Pt, etc.）

04 Wet etching and cleaning

05 Thin film PECVD deposited SiO2, Si3N4, ALD deposited Al2O3, AlN and Si3N4, etc

06 Ion implantation N, BF2, Ar

07 TSV process

08 Grinding, scribing

09 Wafer, device testing

10 Laser slotting

11 Pan cleaning

Contact Us

Address：

No.B12 Building,No.2 Fuxin Road Zhangjiagang,Jiangsu Province, China, 215600

HotLine：

+86 0512-88830088-8001

Email：

ces@corenergy.com