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High-VTH E-mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped p-GaN Engineering
Yulei Jin, Feng Zhou, Member, IEEE, Weizong Xu, Zhengpeng Wang, Tianyang Zhou, Dong Zhou, Fangfang Re, Yuanyang Xia, Leke Wu, Yiheng Li, Tinggang Zhu, Dunjun Chen, Rong Zhang, Jiandong Ye, Youdou Zheng and Hai Lu, Senior Member, IEEE
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Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress
Sheng Li a, Chi Zhang a, Siyang Liu a, Jiaxing Wei a, Long Zhang a, Weifeng Sun a,*,
Youhua Zhu b, Tingting Zhang c, Dongsheng Wang c, Yinxia Sun c
a National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
b School of Electronics and Information, Nantong University, Nantong, 226019, China
c CorEnergy Semiconductor Co., LTD, Zhangjiagang, 215600, China
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Integrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD Structures
Sheng Li, Siyang Liu, Chi Zhang, Jiaxing Wei, Long Zhang, Weifeng Sun* National ASIC System Engineering Research Center Southeast University Nanjing, China
Youhua Zhu, Tingting Zhang, Dongsheng Wang, Yinxia Sun, Yiheng Li, Tinggang Zhu CorEnergy Semiconductor Co., LTD Zhangjiagang, China
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Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
To cite this article: Changkun Zeng et al 2019 Appl. Phys. Express 12 121005
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Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
To cite this article: Yuanyang Xia et al 2020 Mater. Res. Express 7 065902
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Investigations of the gate-instability characteristics in Schottky/ohmic type p-Gan gate normally-off AIGan/Gan HEMTs
Changkun Zeng,Weizong Xu,Yuanyang Xia,Danfeng Pan,Yiwang Wang,Qiang Wang,Youhua Zhu,Fangfang Ren,Dong ZHou,Jiandong Ye,Dunjun Chen,Rong Zhang,Youdou Zheng,and Hai Lu
2019 The Japan Society of Applied Physics
